2
RF Device Data
Freescale Semiconductor
MD7P19130HR3 MD7P19130HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 40 W CW
RθJC
0.31
0.36
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(3)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(3)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 316
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 1250 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3.16Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics
(3,4)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.2
?
pF
Output Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
586
?
pF
Input Capacitance
(VDS
=28Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
348
?
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1250 mA, Pout
= 40 W Avg., f = 1987.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
18.5
20
21.5
dB
Drain Efficiency
ηD
27
30
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.6
6
?
dB
Adjacent Channel Power Ratio
ACPR
?
-- 3 6
--32.5
dBc
Input Return Loss
IRL
?
-- 1 6
-- 7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Measurement made with device in single--ended configuration.
4. Part internally matched both on input and output.
(continued)
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